Pristupačnost |
Sanja Žonja was born in 1983 in Šibenik, Croatia. In 2001, she enrolled in the Faculty of Electrical Engineering and Computing. In September 2006, she received the dipl. ing. degree in electrical engineering. From July 2007, she is with the Department of Electronics, Microelectronics, Computing and Intelligent Systems as a research assistant on the project „Sophisticated semiconductor structures for communication technology“ (sponsored by the Ministry of Science, Education and Sport) led by Assistant Professor Marko Koričić. She actively collaborates with Ruđer Bošković Institute, Laboratory of Molecular Physics. In 2008, she became an external associate of the Institute of physics, Laboratory for studying strongly correlated systems. In summer 2010, she attended the European School on Nanosciences and Nanotechnologies in Grenoble, France. In July 2013, she defended her Ph.D. thesis entitled "Analysis of structure, electronic and transport properties of heavily doped polycrystalline silicon thin films" that was done under the supervision of Senior Scientist Mile Ivanda and Assistant Professor Marko Koričić. From July 2013, she is with the Department of Electronics, Microelectronics, Computer and Intelligent Systems, Faculty of Electrical Engineering and Computing, as a Postdoctoral Researcher and Senior Teaching Assistant. Her research is focused on amorphous and polycrystalline thin films of semiconductors, their deposition, modeling, the measurement of properties and potential applications. Special emphasis is put on heavily doped silicon, ways of its deposition and annealing, the analysis of its structural and transport properties. Her work resulted in the formulation of a new theoretical model for grain growth in polysilicon which, for the first time, includes the grain growth stagnation effect. Moreover, low temperature resistivity measurements revealed an unexpected behavior in heavily doped polycrystalline silicon which is rather typical for quasi 2D systems that are good metals. Finally, on the basis of her measurements, she developed a new model which connects grain size in polycrystalline silicon with the thermoelectric power factor. She has authored or co-authored 7 papers in peer reviewed international journals and 12 peer reviewed papers presented on international conferences. Her papers were cited 11 times according to SCOPUS database with h-index of 3. She is a member of IEEE society and Society for Information and Communication Technologies, Electronics and Microelectronics (MIPRO).
Publications |