Ivan Berdalović was born in Mohács, Hungary, on 8 November 1992. He finished primary and secondary school in Beli Manastir, Croatia, after which he started his studies in Electrical Engineering and Information Technology at the Faculty of Electrical Engineering and Computing at the University of Zagreb. During his studies, he worked on subjects in the field of microelectronics, semiconductor technology, optoelectronics as well as analogue and digital integrated circuits. Other than having an excellent grade point average, he also received the "Josip Lončar" award for his success during the first year of Master studies as well as the Rector's Award for best scientific paper. He received his MSc in 2016 on the topic of single-photon avalanche photodetectors, after which he was hired as a PhD student at the European Organisation for Nuclear Research (CERN), where he was working on the design of advanced pixel detectors for the ATLAS experiment. Apart from technical training in the topics of microelectronics and detectors, during his PhD he also attended courses on innovation management and technological competence leveraging, and acquired a PRINCE2 certificate in project management.
Since 2019, he has been working as a postdoctoral researcher at the Micro- and nanoelectronics laboratory of the Faculty of Electrical Engineering and Computing in Zagreb, where his main focus is the modelling of carrier transport in advanced nanoelectronic structures such as high electron mobility transistors (HEMTs) made of gallium nitiride (GaN) and related materials. He is the author and co-author of numerous papers on avalanche photodiodes, radiation-hard pixel detectors and modelling of electron mobility, and he has participated in several international conferences.