Tihomir Knežević was born on May 21st, 1985 in Slavonski Brod, Croatia. In July 2009, he received the Dipl. Ing. degree in Electrical Engineering from the Faculty of Electrical Engineering and Computing, University of Zagreb. As a student he was awarded “Josip Lončar” bronze medal of Faculty of Electrical Engineering and Computing, University of Zagreb for the best student in the class. From December 2009, he is with the Department of Electronics, Microelectronics, Computer and Intelligent Systems, first as a Research Associate till February 2011, and later as a Research and Teaching Assistant. As a Research Associate he worked on projects: “Electrical 1/f characterization of JFET's for use in low-noise pre-amplifiers for radiation detectors”, “Layout design of test structures for integrated detectors” and “Simulation software for characterization of carrier transport in integrated semi-metallic thin films” in collaboration with Delft University of Technology, The Netherlands, and led by Professor Tomislav Suligoj. As a Research and Teaching Assistant he has worked on the project “Nanometric Electron Devices and Circuit Applications”, sponsored by the Ministry of Science, Education and Sport, and led by Professor Tomislav Suligoj. In July 2010, he successfully completed Microsystems Design Training Course organized by Eurotraining-MST project held at University of Ljubljana, Slovenia.
His research activities are focused on modeling and simulation of advanced semiconductor structures, namely photodetectors. He performed extensive simulations of various effects in ultraviolet and low-energy photodiode detector structures, drift-detector structures, avalanche photodetectors and single-photon avalanche photodetectors (SPADs) using 2D and 3D numerical simulators and modeling. His work resulted in performance optimization of various photodiode detector structures to be used in industrial applications. He developed a TCAD-based simulation environment capable of modeling the discrete events in SPADs. During his PhD research, he was focused of measurements of electrical and physical properties of pure amorphous boron (PureB) layers which led to the construction of a TCAD model for PureB devices.
He has authored or co-authored 2 papers in peer-reviewed international journal, 10 peer-reviewed papers presented on international conferences and several technical reports for Asahi Kasei Microdevices Co. Ltd., Japan, Delft University of Technology, The Netherlands, and Laser Components DG, Inc., USA. He received four best paper awards for papers presented at: IEDM International Electron Devices Meeting in 2010, I2MTC International Instrumentation and Measurement Technology Conference in 2011 and MIPRO Microelectronics, Electronics and Electronic Technologies Conference in 2012 and 2016.
He is a member of IEEE Electron Devices Society (IEEE EDS).