1. Šprem, Marko; Babić, Dubravko.
Accurate estimate and measurement of continuous-wave noise in filtered incoherent light. // Applied optics (2004)56 (2017) , 6; 1724-1729 (journal article).



1. Krivec, Sabina; Poljak, Mirko; Suligoj, Tomislav.
Electron mobility in ultra-thin InGaAs channels : Impact of surface orientation and different gate oxide materials. // Solid-state electronics115 (2016) , 1; 109-119 (journal article).

2. Poljak, Mirko; Suligoj, Tomislav.
Quantum transport analysis of conductance variability in graphene nanoribbons with edge defects.// IEEE transactions on electron devices63 (2016) , 2; 537-543 (journal article).

3. Poljak, Mirko; Suligoj, Tomislav.
Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects. // Nano Research9 (2016) , 6; 1723-1734 (journal article).

4. Žilak, Josip; Koričić, Marko; Suligoj, Tomislav.
Reliability Degradation Mechanisms of Horizontal Current Bipolar Transistor. // IEEE transactions on electron devices63 (2016) , 11; 4409-4415 (journal article).

5. Bosiljevac, Marko; Downing, John; Babić, Dubravko.
Reaching <100  ppm/K output intensity temperature stability with single-color light-emitting diodes. // Applied optics (2004)55 (2016) , 32; 9060-9066 (journal article).



1. Koričić, Marko; Žilak, Josip; Suligoj, Tomislav.
Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor With 36 V Breakdown Integrated in BiCMOS at Zero Cost. // IEEE electron device letters36 (2015) , 2; 90-92 (journal article).

2. Poljak, Mirko; Wang, Kang L.; Suligoj, Tomislav.
Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons. // Solid-state electronics108 (2015) ; 67-74 (journal article).



1. Babić, Dubravko.
Optimal AlGaN/GaN HEMT Buffer Layer Thickness in the Presence of an Embedded Thermal Boundary. // IEEE transactions on electron devices61 (2014) , 4; 1047-1053 (journal article).

2. Očko, Miroslav; Žonja, Sanja; Ivanda, Mile.
Grain growth from amorphous phase. // AIP advances4 (2014) ; 037125-1-037125-7 (journal article).



1. Poljak, Mirko; Suligoj, Tomislav; Wang, Kang L.
Influence of substrate type and quality on carrier mobility in graphene nanoribbons. // Journal of applied physics114 (2013) , 5; 053701-1-053701-8 (journal article).

2. Poljak, Mirko; Wang, Minsheng; Song, Emil B.; Suligoj, Tomislav; Wang, Kang L.
Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbons. // Solid-state electronics84 (2013) , 6; 103-111 (journal article).

3. Babić, Dubravko.
Thermal Analysis of AlGaN/GaN HEMTs Using Angular Fourier - Series Expansion. // Journal of heat transfer-transactions of the asme135 (2013) , 11; 111001-1-111001-9 (journal article).

4. Očko, Miroslav; Žonja, Sanja; Salamon, Krešimir; Ivanda, Mile; Yu, Lei; Newman, Nathan.
Investigations of the disorder in the TaxN thin films: On the first order Raman spectrum of the rock salt crystal structure. // Journal of applied physics114 (2013) ; 043707-1-043707-5 (journal article).



1. Koričić, Marko; Suligoj, Tomislav; Morita, So-ichi; Mochizuki, Hidenori; Shinomura, Katsumi; Imai, Hisaya.
Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration. // IEEE transactions on electron devices59 (2012) , 12; 3647-3650 (journal article).

2. Poljak, Mirko; Jovanović, Vladimir; Grgec, Dalibor; Suligoj, Tomislav.
Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling. // IEEE transactions on electron devices59 (2012) , 6; 1636-1643 (journal article).

3. Poljak, Mirko; Song, Emil B.; Wang, Minsheng; Suligoj, Tomislav; Wang, Kang L.
Influence of edge defects, vacancies and potential fluctuations on transport properties of extremely-scaled graphene nanoribbons. // IEEE transactions on electron devices59 (2012) , 12; 3231-3238 (journal article).

4. Komljenović, Tin; Babić, Dubravko; Šipuš Zvonimir. 
47-km 1.25-Gbps transmission using self-seeded transmitter with a modulation averaging reflector. // Opt. Express, vol. 20, pp. 17387–17393, 2012. (journal article).

5. Očko, Miroslav; Samardžija, Zoran; Žonja, Sanja; Aviani, Ivica.
Structural and electronic properties of the highly concentrated UxY1-xRu2Si2 alloy system. // Journal of alloys and compounds512 (2012) , 1; 79-84 (journal article).




1. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications. // Solid-state electronics65/66 (2011) ; 130-138 (journal article).

2. D. I. Babić, Q. Diduck, F. Faili, J. Wasserbauer, F. Lowe, D. Francis, F. Ejeckam.
Laser machining of GaN-on-diamond Wafers // Diamond and Related Materials, vol. 20, no. 5-6, pp. 675-681, 2011. (journal article)

3. T. Komljenović, D. Babić, Z. Šipuš.
Modulation Averaging Reflectors for Extended Cavity Optical Sources // IEEE J. Lightwave Technol., vol. 29, no. 15, pp. 2249-2258, 2011. (journal article)

4. Očko, Miroslav; Žonja, Sanja; Aviani, Ivica; Bauer, Eric D.; Sarrao, John L.
Transport properties of the YbAl3 compound: On the energy scales of YbAl3 from thermopower data. // Journal of alloys and compounds509 (2011) , 25; 6999-7003 (journal article).

5. Šakić, Agata; Nanver, Lis K.; Scholtes Tom L.M.; Heerkensa, Carel Th.H.; Knežević, Tihomir; Van Veen, Gerard; Kooijman, Kees; Vogelsang, Patrick.
Boron-layer silicon photodiodes for high-efficiency low-energy electron detection. // Solid-state electronics65/66 (2011) ; 38-44 (journal article).



1. Jovanović, Vladimir; Suligoj, Tomislav; Poljak, Mirko; Civale, Yann; Nanver, Lis K.
Ultra-high aspect-ratio FinFET technology. // Solid-state electronics54 (2010) , 9; 870-876 (journal article).

2. Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, Hisaya.
Design considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm bulk CMOS technology. // Solid-state electronics54 (2010) , 10; 1166-1172 (journal article).

3. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Suppression of Corner Effects in Wide-Channel Triple-Gate Bulk FinFETs. // Microelectronic Engineering87 (2010) , 2; 192-199 (journal article).

4. Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, Hisaya.
Horizontal Current Bipolar Transistor With a Single Polysilicon Region for Improved High-Frequency Performance of BiCMOS ICs. // IEEE electron device letters31 (2010) , 6; 534-536 (journal article).

5. Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav.
Analysis of Subthreshold Conduction in Short-Channel Recessed Source/Drain UTB SOI MOSFETs. // Solid-state electronics54 (2010) , 5; 545-551 (journal article).

6. D. Francis, F. Faili, D. Babić, F. Ejeckam, A. Nurmiko, H. Maris.
Formation and characterization of 4-inch GaN-on-diamond substrates // Diam. Rel. Mat., vol. 19, pp. 229-233, 2010. (journal article)

7. K. Chabak, J. K. Gillespie, V. Miller, A. Crespo, J. Roussos, M. Trejo, D. E. Walker, G. D. Via, G. H. Jessen, J. Wasserbauer, F. Faili, D. I. Babić, D. Francis, F. Ejeckam.
Full-wafer characterization fo AlGaN/GaN HEMTs of free-standing diamond substrates // IEEE Electron. Dev. Lett., vol. 31, no. 2, pp. 99-101, 2010. (journal article)

8. Očko, Miroslav; Žonja, Sanja; Nelson G.L.; Freericks, J.K.; Yu, Lei; Newman, N.
Low temperature transport properties of TaxN thin films (0.72≤ x ≤ 0.83). // Journal of physics. D, Applied physics43 (2010) , 44; 445405-1-445405-12 (journal article).



1. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Improving bulk FinFET DC performance in comparison to SOI FinFET. // Microelectronic engineering86 (2009) , 10; 2078-2085 (journal article).

2. Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav.
Analytical Models of Front- and Back-Gate Potential Distribution and Threshold Voltage for Recessed Source/Drain UTB SOI MOSFETs. // Solid-state electronics53 (2009) , 5; 540-547 (journal article).

3. Q. Diduck, J. Felbinger, L. F. Eastman, D. Francis, J. Wasserbauer, F. Faili, D. I. Babić, F. Ejeckam.
Frequency performance enhancement of AlGaN/GaN HEMTs on diamond // Electronics Letters, vol. 45, no. 14, pp. 758-759, 2009. (journal article)

4. Očko, Miroslav; Žonja, Sanja; Stubičar, Mirko; Stubičar, Nada; Bauer, Eric D.; Sarrao, John L.
Why YbxLu1-xAl3 and YbxY1-xInCu4 have quite opposite concentration dependence of the Vickers microhardness?. // Solid State Communications149 (2009) , 33-34; 1313-1316 (journal article).



1. Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav.
Vertical silicon-on-nothing FET: Threshold voltage calculation using compact capacitance model. // Solid-State Electronics52 (2008) , 10; 1505-1511 (journal article).

2. Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Biljanović, Petar.
Low temperature resistivity of heavily boron doped LPCVD polysilicon thin films. // Journal of physics. D, Applied physics41 (2008) , 16; 162002-1-162002-5 (journal article).



1. J.G. Felbinger, M.V.S. Chandra, Y. Sun, L.F. Eastman, J. Wasserbauer, F. Faili, D. Babić, D. Francis, and F. Ejeckam.
Comparison of GaN HEMTs on Diamond and SiC Substrates // IEEE Electron Device Letters, vol. 28, no. 11, p. 948, 2007. (journal article)

2. Ivanda, Mile; Gebavi, Hrvoje; Ristić, Davor; Furić, Krešimir; Musić, Svetozar; Ristić, Mira; Žonja, Sanja; Biljanović, Petar; Gamulin, Ozren; Balarin, Maja; Montagna, M.; Ferarri, M.; Righini, G. C.
Silicon nanocrystals by thermal annealing of Si-rich silicon oxide prepared by the LPCVD method. // Journal of molecular structure834/836 (2007) ; 461-464 (journal article).



1. Suligoj, Tomislav; Biljanović, Petar; Sin, J.K.O.; Wang, Kang L.
A New HCBT with a Partially Etched Collector. // IEEE electron device letters26 (2005) , 3; 200-202 (journal article).

2. Suligoj, Tomislav; Sin, J.K.O.; Wang, Kang L.
Horizontal Current Bipolar Transistor (HCBT) Process Variations for Future RF BiCMOS Applications. // IEEE transactions on electron devices52 (2005) , 7; 1392-1398 (journal article).

3. Suligoj, Tomislav; Wang, Kang L.
A Novel Isolation of Pillar-like Structures by the Chemical-Mechanical Polishing and Etch-Back Process. // Electrochemical and solid-state letters8 (2005) , 5; G125-G127 (journal article).

4. Thompson, Phillip E.; Jernigan, Glenn; Schulze, Joerg; Eisele, Ignaz; Suligoj, Tomislav.
Vertical SiGe-based Silicon-on-Nothing (SON) Technology for Sub-30nm MOS Devices. // Materials science in semiconductor processing8 (2005) , 1-3; 51-57 (journal article).

5. C. Pease, and D. Babić.
Practical Measurement of Timing Jitter Contributed by a Clock-and-Data Recovery Circuit // IEEE Trans. Circuits and Systems-I, vol. 52, no. 1, pp. 119-126, 2005. (journal article)



1. Suligoj, Tomislav; Liu, H.; Sin, J.K.O.; Tsui, K.; Chu, R.; Chen, K.J.; Biljanovic, Petar; Wang, Kang L.
A Low-cost Horizontal Current Bipolar Transistor (HCBT) Technology for the BiCMOS Integration with FinFETs. // Solid-state electronics48 (2004.) , 10-11; 2047-2050 (journal article).



1. Suligoj, Tomislav; Koričić, Marko; Biljanović, Petar; Wang, Kang L.
Fabrication of Horizontal Current Bipolar Transistor (HCBT). // IEEE Transactions on Electron Devices50 (2003) , 7; 1645-1651 (journal article).

2. D. Babić, and J. Plombon.
Relationship Between Root-Mean-Square and Peak-to-Peak Jitter Measurements // Microwave and Optical Technology Letters, vol. 39, no. 4, pp. 323–326, 2003. (journal article).



1. Biljanović, Petar; Suligoj, Tomislav.
Horizontal Current Bipolar Transistor (HCBT): A New Concept of Silicon Bipolar Transistor Technology. // IEEE TRANSACTIONS ON ELECTRON DEVICES, NOVEMBER 200148 (2001) , 11; 2551-2554 (journal article).

2. N-Y. Jin-Phillip, W. Sigle, A. Black, D. Babić, J. E. Bowers, E. L. Hu, M. Ruhle.
Interface of directly bonded GaAs and InP// J. Applied Physics, vol. 89, no. 2, pp. 1017-1024, 2001. (journal article)